Influence of defects on the temperature dependence of the density of electrons in the two-dimensional and doped channels of selectively doped AlxGa1−x
As/GaAs heterostructures |
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| Authors: | S G Dmitriev K I Spiridonov |
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| Institution: | (1) Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 141120 Fryazino, Moscow District, Russia |
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| Abstract: | The densities of electrons in the two-dimensional and doped channels of selectively doped AlGaAs/GaAs heterostructures are
calculated. It is shown that traps and surface states in the AlGaAs layer can change the sign of the temperature dependence
of the electron density in the two-dimensional channel.
Zh. Tekh. Fiz. 68, 140–142 (October 1998) |
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