Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation |
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Authors: | SUN Hua-Jun HOU Li-Song WU Yi-Qun TANG Xiao-Dong |
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Affiliation: | Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800Laboratory of Polar Materials and Devices, East China Normal University, Shanghai 200241 |
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Abstract: | We demonstrate a reversible resistance switching effect that does not rely on amorphous-crystalline phase transformation in a nanoscale capacitor-like cell using Ge1Sb4Te7 films as the working material. The polarity and amplitude of the applied electric voltage switches the cell resistance between low- and high-resistance states, as revealed in the current-voltage characteristics of the film by conductive atomic force microscopy (CAFM). This reversible SET/RESET switching effect is induced by voltage pulses and their polarity. The change of electrical resistance due to the switching effect is approximately two orders of magnitude. |
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Keywords: | 42.79.Vb 84.37.+q 61.43.Dq |
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