| GaAs半导体中的三光子吸收 |
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| 引用本文： | 程昭,徐大纶.GaAs半导体中的三光子吸收[J].光子学报,1992,21(4):330-336. |
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| 作者姓名： | 程昭 徐大纶 |
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| 作者单位： | 中国科学院西安光学精密机械研究所用态光学技术国家重点实验室，中国科学院西安光学精密机械研究所用态光学技术国家重点实验室，中国科学院西安光学精密机械研究所用态光学技术国家重点实验室，中国科学院西安光学精密机械研究所用态光学技术国家重点实验室 西安 710068，西安 710068，西安 710068 中山大学激光与光谱学研究所，西安 710068 |
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| 摘 要： | 本文从直接能隙半导体中三光子吸收跃迁速率的全量子理论表达式出发,在二能带和四能带理论模型下,分别就抛物线和非抛物线型能带,计算了GaAs半导体的三光子吸收系数。其结果与实验值作了比较。同时还给出了GaAs中三光子吸收系数的色散曲线。
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| 关 键 词： | 三光子吸收 全量子理论 能带 色散 |
| 收稿时间： | 1991-10-29 |
THREE-PHOTON ABSORPTION IN GaAs |
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| Cheng Zhao,Xu Dalun,Wang Liming ',Hou XunState Key Laboratory of Transient Optics and Technology,Xi'an Institute of Optics and Precision Mechanics,Academia Sinica,Xi'an.THREE-PHOTON ABSORPTION IN GaAs[J].Acta Photonica Sinica,1992,21(4):330-336. |
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| Authors: | Cheng Zhao Xu Dalun Wang Liming ' Hou XunState Key Laboratory of Transient Optics and Technology Xi'an Institute of Optics and Precision Mechanics Academia Sinica Xi'an |
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| Institution: | Cheng Zhao,Xu Dalun,Wang Liming ',Hou XunState Key Laboratory of Transient Optics and Technology,Xi'an Institute of Optics and Precision Mechanics,Academia Sinica,Xi'an 710068 |
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| Abstract: | Using a two-band model and a four-band model, the three-photon absorption coefficients in GaAs are separately calculated for a parabolic band and a non-parabolic band in this paper.The expressions of the three-photon absorption transition rate for the direct-energy gap semiconductor based on the all-quantum theory are used in these calculations.The calculated results are compared with the experimental values.And the dispersive curves of three-photon absorption coefficients in GaAs are given for different models. |
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| Keywords: | Three-photon absorption All-quantum theory Energy band Dispersion |
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