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A new physical-based compact model of floating-gate EEPROM cells |
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| Authors: | R Bouchakour N Harabech P Canet J M Mirabel Ph Boivin O Pizzuto |
| Institution: | a Laboratoire Matériaux et Micro-électronique de Provence, UMR CNRS 6137, Institut Charles Fabry, Université de Provence, IMT Technopôle de Château Gombert, 13451 Marseille cedex 20, France b ENST-Paris, Département COMELEC, URA CNRS 820, 46 Rue Barrault, 75634 Paris cedex 13, France c ST Microelectronics, ZI de Rousset BP 2, 13106 Rousset, France |
| Abstract: | A model for static and transient simulations of an electrically erasable programmable read-only memory (EEPROM) cell has been developed. This physical compact model is based on charge sheet approach which is able to describe the complete electrical properties of the cell. In this model the charge neutrality, including the charge trapped on the floating gate, is applied to determine the surface potential. From the surface potential, related to the terminal voltages, the drain current and the different charges present in the cell structure can be calculated. This model has been successfully implemented in common circuit simulators (Eldo and Saber) and used for the study of the write/erase operations in an EEPROM cell. |
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