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集成电路封装高密度化与散热问题
引用本文:曾理,陈文媛,谢诗文,杨邦朝.集成电路封装高密度化与散热问题[J].电子与封装,2006,6(9):15-21.
作者姓名:曾理  陈文媛  谢诗文  杨邦朝
作者单位:电子科技大学微电子与固体电子学院,成都,610054
摘    要:各种电子器件的封装形式及性能不断提升,IC封装技术向SIP发展,器件的发热密度越来越高,过热问题已成为目前电子元器件技术的发展瓶颈。文中从封装趋势及应用两方面来说明散热问题的影响及挑战。从封装发展最新趋势SIP的概念出发,介绍相关的概念及散热的影响,其次介绍CPU及存储器封装两类重要电子器件的发展趋势,及其面临的散热问题。

关 键 词:系统芯片  系统封装  热阻网络  芯片界面温度  无焊内建层技术
文章编号:1681-1070(2006)09-0015-07
收稿时间:2006-03-20
修稿时间:2006年3月20日

The Development and Heat Dispersion Problem in Integrate Circuit Packaging
ZENG Li,CHEN Wen-yuan,XIE Shi-wen,YANG Bang-chao.The Development and Heat Dispersion Problem in Integrate Circuit Packaging[J].Electronics & Packaging,2006,6(9):15-21.
Authors:ZENG Li  CHEN Wen-yuan  XIE Shi-wen  YANG Bang-chao
Institution:School of Micro-Electronics and Solid Electronics, University of Electronics Science and Technology, Chengdu 610054, China
Abstract:The packaging type and ability of the electronic products have been continuously improved.The IC encapsulation technology are tending towards SIP,the heat density of the elements are getting more and more high. Over-heating has become a choke point of the development of the electronic elements at present.This article explains the effects and challenges of heat-spreading from the trend and application of encapsulation.It begins with the concept of SIP,the newest trend of encapsulation,explaining the correlative concepts and the effects of heat-spreading;then it introduces the development trend of tow important kinds of electronic elements:CPU and the encapsulation of the memorizer,as well as the heat-spreading problems which are about to deal with.
Keywords:SOC  SIP  thermal resistance network  junction temperature  bumpless build-up layer
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