| 低温低剂量率下金属-氧化物-半导体器件的辐照效应 |
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| 引用本文： | 张廷庆,刘传洋,刘家璐,王剑屏,黄智,徐娜军,何宝平,彭宏论,姚育娟.低温低剂量率下金属-氧化物-半导体器件的辐照效应[J].物理学报,2001,50(12):2434-2438. |
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| 作者姓名： | 张廷庆 刘传洋 刘家璐 王剑屏 黄智 徐娜军 何宝平 彭宏论 姚育娟 |
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| 作者单位： | (1)西安电子科技大学微电子学研究所,西安710071; (2)西北核技术研究所,西安710024 |
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| 摘 要： | 对金属氧化物半导体(MOS)器件在低剂量率γ射线辐照条件下的剂量率效应以及温度效应进行了研究.对不同剂量率、不同温度辐照后MOS器件的阈值电压漂移进行了比较.结果表明,低剂量率辐照下,感生界面态要受到辐照时间的长短以及生成的氢离子数目的影响,辐照时间越长,生成的氢离子越多,感生界面态密度越大;温度对界面态的影响与界面态建立的时间有关,低温辐照时,界面态建立的时间要加长
关键词：
辐照效应
阈值电压漂移
低剂量率
低温
界面态
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| 关 键 词： | 辐照效应 阈值电压漂移 低剂量率 低温 界面态 |
| 文章编号： | 1000-3290/2001/50(12)2434-05 |
| 收稿时间： | 2001-04-23 |
| 修稿时间： | 7/3/2001 12:00:00 AM |
RADIATION EFFECTS OF MOS DEVICE AT LOW DOSE RATE AND LOW TEMPERATURE |
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| ZHANG TING-QING,LIU CHUAN-YANG,LIU JIA-LU,WANG JIAN-PING,HUANG ZHI,XU NA-JUN,HE BAO-PING,PENG HONG-LUN and YAO YU-JUAN.RADIATION EFFECTS OF MOS DEVICE AT LOW DOSE RATE AND LOW TEMPERATURE[J].Acta Physica Sinica,2001,50(12):2434-2438. |
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| Authors: | ZHANG TING-QING LIU CHUAN-YANG LIU JIA-LU WANG JIAN-PING HUANG ZHI XU NA-JUN HE BAO-PING PENG HONG-LUN and YAO YU-JUAN |
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| Abstract: | Effects of irradiation dose rates and irradiation temperature are investigated for MOS device under γ-rays. Threshold voltage shift is compared after the MOS devices are radiated at different dose rates and different temperatures. At low dose rate,interface trap formation is affected by the irradiation time and H+ induced in the oxide,the longer the device is radiated and the greater the number of induced H+,the more the interface trap. The effects of temperature on radiation response are related to the time of interface trap formation,it takes more time to form interface trap at low temperatures. |
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| Keywords: | radiation effects threshold voltage shift low dose rate low temperature interface trap |
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