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Laser transitions under resonant optical pumping of donor centres in Si:P |
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| Authors: | R.Kh. Zhukavin D.M. Gaponova A.V. Muravjov E.E. Orlova V.N. Shastin S.G. Pavlov H.-W. Hübers J.N. Hovenier T.O. Klaassen H. Riemann A.F.G. van der Meer |
| Affiliation: | (1) Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod, Russia, RU;(2) Institut für Weltraumsensorik und Planetenerkundung, DLR, Rutherfordstr. 2, 12489 Berlin, Germany, DE;(3) Delft University of Technology, P.O. Box 5046, 2600 GA Delft, The Netherlands, NL;(4) Institut für Kristallzüchtung, Max-Born-Str. 2, 12489 Berlin, Germany, DE;(5) FOM-Institute for Plasma Physics, Rijnhuizen, 3439 MN Nieuwegein, The Netherlands, NL |
| Abstract: | Terahertz stimulated emission of phosphorus donors in silicon optically excited by radiation from the free-electron laser FELIX has been studied. It is found that a spectral line of the Si:P laser emission depends on pump frequency. Stimulated emission arises on the 2p0→1s(E) intra-centre transition (21.2 meV) under resonant pumping of the 2p0 state and on the 2p0→1s(T2) transition (22.3 meV) under pumping of the 2p± or higher odd-parity donor states. The line shift is attributed to the Auger redistribution of the 1s(E)- and 1s(T2)-state populations. Received: 7 November 2002 / Revised version: 7 April 2003 / Published online: 14 May 2003 RID="*" ID="*"Corresponding author. Fax: +49-30/6705-55-07, E-mail: sergeij.pavlov@dlr.de RID="**" ID="**"On leave from: The Institute for Physics of Microstructures, Nizhny Novgorod, Russia |
| Keywords: | PACS: 78.45.+h 41.60.Cr |
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