| 拓扑缺陷对碳纳米管电学性能的影响 |
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| 引用本文： | 张丽芳,胡慧芳.拓扑缺陷对碳纳米管电学性能的影响[J].半导体学报,2005,26(10):1959-1962. |
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| 作者姓名： | 张丽芳 胡慧芳 |
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| 作者单位： | 天津商学院理学院，湖南大学应用物理系 天津300134，湖南大学应用物理系，长沙410082，长沙410082 |
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| 基金项目： | 国家自然科学基金
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湖南省自然科学基金 |
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| 摘 要： | 在紧束缚近似基础上，利用扩展的Su-Schriffer-Heeger (SSH）模型，在实空间中计算了理想的“zigzag”碳纳米管中分别引入5/7, 5/6/7, 5/6/6/7拓扑缺陷所构成的(9,0)-(8,0), (9,0)-(7,0)和(9,0)-(6,0)三种系统的能带结构和电荷密度，并对这三种系统的计算结果进行了比较. 结果表明，拓扑缺陷五边形和七边形在碳管中沿轴向的不同分布对碳管电学性能的影响明显不同. 因此，可以研制出基于这些异质结的不同电子器件基元.
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| 关 键 词： | 碳纳米管 分子结 异质结 拓扑缺陷 电荷密度 |
| 文章编号： | 0253-4177（2005）10-1959-04 |
| 收稿时间： | 2005-03-27 |
| 修稿时间： | 2005-06-05 |
Effects of Topological Defects on Carbon Nanotube |
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| Zhang Lifang,Hu Huifang.Effects of Topological Defects on Carbon Nanotube[J].Chinese Journal of Semiconductors,2005,26(10):1959-1962. |
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| Authors: | Zhang Lifang Hu Huifang |
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| Institution: | 1 School of Sciences, Tianjin University of Commerce, Tianjin 300134, China;2 Department of Applied Physics, Hunan University, Changsha 410082, China |
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| Abstract: | Using the extended Su-Schriffer-Heeger model,in real space,we calculate the electronic structure and charge density of three systems,(9,0)-(8,0),(9,0)-(7,0) and (9,0)-(6,0),which are achieved by introducing topological defects (5/7) ,(5/6/7),and (5/6/6/7) in the perfect hexagonal network of the zigzag carbon nanotube configuration.At the same time,the results of these different systems are compared.The results show that the different arrangements of pentagons and heptagons along the axis cause obvious differences on the electrical properties of the carbon nanotube.So,different electronic devices based on these heterojunctions can be created. |
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| Keywords: | carbon nanotube molecular junction heterojunction topological defect charge density |
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