| 使用ZnO电流扩展层提高GaN基LED提取效率 |
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| 引用本文： | 杨华,王晓峰,阮军,李志聪,伊晓燕,段垚,曾一平,王国宏. 使用ZnO电流扩展层提高GaN基LED提取效率[J]. 半导体学报, 2009, 30(9): 094002-4 |
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| 作者姓名： | 杨华 王晓峰 阮军 李志聪 伊晓燕 段垚 曾一平 王国宏 |
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| 基金项目： | 中国科学院半导体研究所青年人才领域前沿项目ISCAS2008T14 |
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| 摘 要： | Gallium nitride （GaN） based light emitting diodes （LEDs） with a thick and high quality ZnO film as a current spreading layer grown by metal-source vapor phase epitaxy （MVPE） are fabricated successfully. Compared with GaN-based LEDs employing a Ni/Au or an indium tin oxide transparent current spreading layer, these LEDs show an enhancement of the external quantum efficiency of 93% and 35% at a forward current of 20 mA, respectively. The full width at half maximum of the ZnO （002） ω-scan rocking curve is 93 arcsec, which corresponds to a high crystal quality of the ZnO film. Optical microscopy and atomic force microscopy are used to observe the surface morphology of the ZnO film, and many regular hexagonal features are found. A spectrophotometer is used to study the different absorption properties between the ZnO film and the indium tin oxide film of the GaN LED. The mechanisms of the extraction quantum efficiency increase and the series resistance change of the GaN-based LEDs with ZnO transparent current spreading layers are analyzed.
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| 关 键 词： | 氧化锌薄膜 氮化镓薄膜 发光二极管 光提取效率 扩散层 电流 基础 铟锡氧化物 |
| 收稿时间： | 2009-03-13 |
| 修稿时间： | 2009-04-07 |
Light extraction efficiency enhancement of GaN-based light emitting diodes by a ZnO current spreading layer |
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| Yang Hu,Wang Xiaofeng,Ruan Jun,Li Zhicong,Yi Xiaoyan,Duan Yao,Zeng Yiping and Wang Guohong. Light extraction efficiency enhancement of GaN-based light emitting diodes by a ZnO current spreading layer[J]. Chinese Journal of Semiconductors, 2009, 30(9): 094002-4 |
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| Authors: | Yang Hu Wang Xiaofeng Ruan Jun Li Zhicong Yi Xiaoyan Duan Yao Zeng Yiping Wang Guohong |
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| Affiliation: | R & D Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;R & D Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;R & D Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;R & D Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;R & D Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;R & D Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;R & D Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;R & D Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | GaN LED ZnO extraction efficiency transparent electrode |
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| Keywords: | GaN LED ZnO extraction efficiency transparent electrode |
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