| Structural transformation of Ge dimers on Ge（001） surfaces induced by bias voltage |
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| 引用本文： | 秦志辉,时东霞,高鸿钧.Structural transformation of Ge dimers on Ge（001） surfaces induced by bias voltage[J].中国物理 B,2008,17(12):4580-4584. |
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| 作者姓名： | 秦志辉 时东霞 高鸿钧 |
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| 作者单位： | Nanoscale Physics & devices Laboratory, Institute of
Physics, Chinese Academy of Sciences, Beijing 100190,
China;Nanoscale Physics & devices Laboratory, Institute of
Physics, Chinese Academy of Sciences, Beijing 100190,
China;Nanoscale Physics & devices Laboratory, Institute of
Physics, Chinese Academy of Sciences, Beijing 100190,
China |
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| 基金项目： | Project supported by the National
Natural Science Foundation of China (Grant Nos 90406022, 10674159
and 60771037) and the National Basic Research Program of China
(Grant No 2006CB921305). |
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| 摘 要： | Scanning tunnelling microscopy is utilized to investigate the local bias voltage tunnelling dependent transformation between （2×1） and c（4×2） structures on Ge（001） surfaces, which is reversibly observed at room temperature and a critical bias voltage of -0.80 V. Similar transformation is also found on an epitaxial Ce islands but at a slightly different critical bias voltage of -1.00V. It is found that the interaction between the topmost atoms on the STM tip and the atoms of the dimers, and the pinning effect induced by Sb atoms, the nacancies or the epitaxial clusters, can drive the structural transformation at the critical bias voltage.
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| 关 键 词： | 固体表面 原子层 原子排列 单元网格 |
| 收稿时间： | 2008-03-20 |
Structural transformation of Ge dimmers on Ge(001) surfaces induced by bias voltage |
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| Qin Zhi-Hui,Shi Dong-Xia and Gao Hong-Jun.Structural transformation of Ge dimmers on Ge(001) surfaces induced by bias voltage[J].Chinese Physics B,2008,17(12):4580-4584. |
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| Authors: | Qin Zhi-Hui Shi Dong-Xia and Gao Hong-Jun |
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| Institution: | Nanoscale Physics & devices Laboratory, Institute of
Physics, Chinese Academy of Sciences, Beijing 100190,
China |
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| Abstract: | Scanning tunneling microscopy is utilized to investigate the
local-bias- voltage-dependent transformation between (2x1)
and c(4x2) structures on Ge(001) surfaces, which is
reversibly observed at room temperature and a critical bias voltage
of -0.80V. Similar transformation is also found on an epitaxial
Ge islands but at a slightly different critical bias voltage of
-1.00V. It is found that the interaction between the topmost
atoms on the STM tip and the atoms of the dimers, and the pinning
effect induced by Sb atoms, the vacancies or the epitaxial clusters,
can drive the structural transformation at the critical bias
voltage. |
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| Keywords: | scanning tunneling microscopy surface structures Ge structural transition |
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