The fluence effect in hydrogen-ion cleaving of silicon at the sub-100-nm scale |
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Authors: | O Moutanabbir B Terreault M Chicoine F Schiettekatte |
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Institution: | (1) INRS-EMT, Université du Québec, 1650 Boul. Lionel-Boulet, Varennes, Québec, J3X 1S2, Canada;(2) Département de Physique, Université de Montréal, C.P. 6128, Succ. Centre-Ville, Montréal, Québec, H3C 3J7, Canada |
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Abstract: | The implementation at the sub-100-nm scale of ion cleaving requires ion beams of 5 keV/amu or less. The blistering efficiency in 5-keV H-ion-implanted and annealed Si has been found to peak and vanish in a narrow range of ion fluence of (1.5–3.5)×1016H/cm2. In order to understand this effect, the defect profiles in 5-keV H-irradiated Si were studied by Rutherford backscattering/channelling, while the Si-H bonding configurations during annealing were investigated by Raman scattering spectroscopy. Three types of defects play major roles: the broad-band monohydride multivacancy complexes, the fully or partially passivated monovacancy VHn, and H-terminated internal surfaces Si(100):H. Blister absence at high fluence is characterised by the persistence up to 550 °C of the Si(100):H structures, which are blister embryos that failed to coalesce and grow. Radiation-induced stresses and fracture toughening may play roles in inhibiting cleavage at high fluence; however, widening towards the surface of the zone of high H and defect concentration is the likely major factor. PACS 61.82.Fk; 82.80.Gk; 61.85.+p |
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