Modifying of etching anisotropy of silicon substrates by surface active agents |
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Authors: | Krzysztof P Rola Irena Zubel |
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Institution: | (1) IT Collaboratory, Rochester Institute of Technology, Rochester, NY, USA |
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Abstract: | The influence of alcohol additives on etch rate anisotropy of Si(hkl) planes has been studied. The etching processes were carried out in 3 and 5 M KOH aqueous solutions saturated and non-saturated
with alcohols. Isopropanol, 1-propanol and tert-butanol were examined. It has been showed that the etching process cannot be controlled only by the surface tension of the
solution. Saturation of the etching solution with alcohols modifies etch rate anisotropy, lowering the ratio of the etch rate
of (110) and vicinal planes to the etch rate of (100) plane. The morphology of Si(hkl) planes etched in 3 M KOH solution saturated with tert-butyl alcohol has been studied in detail. Smooth (331) and (221) planes
have been achieved in this solution. The (100) plane turned out to be densely covered by hillocks, opposite to the (100) plane
etched in weak-alkaline solution saturated with isopropanol. To explain this phenomenon, the mechanism of hillocks formation
on Si(100) surface has been proposed. |
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