Structural information about tellurium and iodine implanted in semiconductors from analysis of Mössbauer nuclear quadrupole interaction data

We have analyzed through electronic structure investigations, based on a model of an impurity atom trapped close to a substitutional site adjacent to a vacancy, the nuclear quadrupole interactions of¹²⁵Te and¹²⁹I implanted in a number of group IV and III–V semiconductors. Our analysis supports the proposed model for these impurity systems and leads to distances between the impurity and nearest neighbour host atoms close to the normal covalent bond distance, with one exception,¹²⁹I in GaSb, a possible physical reason for which is pointed out. The general nature of our conclusion for the impurity-host bond distances, in particular, its relationship to bond lengths associated with adsorbed halogen atoms at surfaces of semiconductors is discussed.