Quadrupole interactions of fluorine at implantation sites in germanium and silicon |
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| Authors: | K. Bonde Nielsen T. Lauritsen G. Weyer H. K. Schou P. T. Nielsen |
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| Affiliation: | 1. Institute of Physics, University of Aarhus, DK-8000, Aarhus C, Denmark
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| Abstract: | Implantations of F in crystalline Ge has been examined by the DPAD method. Two unique fluorine EFG sites are found. The results show a strong resemblance to similar data obtained earlier for Si, e.g., in either host an axial symmetric EFG oriented along the <111> crystal direction is observed, also the temperature dependences of site populations follow similar trends. A thorough comparison of the Ge and Si data is given. |
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