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High Reflection Ge_(0.45)Te_(0.55) Recording Films
作者姓名:LIU Huiyong  JIANG Fusong  MEN Liqiu  FAN Zhengxiu  GAN Fuxi
作者单位:LIU Huiyong:Shanghai Institute of Optics & Fine Mechanics, the Chinese Academy of Sciences, Shanghai 201800
JIANG Fusong:Shanghai Institute of Optics & Fine Mechanics, the Chinese Academy of Sciences, Shanghai 201800
MEN Liqiu:Shanghai Institute of Optics & Fine Mechanics, the Chinese Academy of Sciences, Shanghai 201800
FAN Zhengxiu:Shanghai Institute of Optics & Fine Mechanics, the Chinese Academy of Sciences, Shanghai 201800
GAN Fuxi:Shanghai Institute of Optics & Fine Mechanics, the Chinese Academy of Sciences, Shanghai 201800
摘    要:HighReflectionGe0.45Te0.55RecordingFilmsLIUHuiyongJIANGFusongMENLiqiuFANZhengxiuGANFuxi(ShanghaiInstituteofOptics&FineMechani...

关 键 词:RFmagnetron  sputtering    phase  change  medium    shortwavelength  recording
收稿时间:1997/6/4

High Reflection Ge0.45Te0.55Recording Films
LIU Huiyong,JIANG Fusong,MEN Liqiu,FAN Zhengxiu,GAN Fuxi.High Reflection Ge_(0.45)Te_(0.55) Recording Films[J].中国激光(英文版),1998,7(2):158-163.
Abstract:The preparation method, phase change transformation properties, optical spectra properties and short wavelength optical storage properties of Ge0.45Te0.55 phase change thin film are reported. The film is prepared by RF-magnetron sputtering technology. The deposited films are amorphous. The crystallization temperature is about 190 ℃, the reflectivity of the crystalline state film is about 50%. A static optical recording tester with an focused Argon laser beam (514.5 nm) irradiating on the films is used to evaluate the optical storage performance. The results show that a reflectivity contrast larger than 15% can be obtained with the low power and short pulse width laser beam. These results indicate that the Ge0.45T0.55 thin film is a promising candidate for high reflectivity and high density compact disk erasable system as the recording material.
Keywords:RF-magnetron sputtering  phase change medium  short-wavelength recording
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