| DEA(TCNQ)2与TEA(TCNQ)2单晶上的STM热化学烧孔性能比较 |
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| 引用本文： | 雷晓钧,陈海峰,刘忠范.DEA(TCNQ)2与TEA(TCNQ)2单晶上的STM热化学烧孔性能比较[J].物理化学学报,2001,17(9):769-772. |
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| 作者姓名： | 雷晓钧 陈海峰 刘忠范 |
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| 作者单位： | Center of Nanoscale Science ＆ Technology,College of Chemistry and Molecular Engineering,Peking University,Beijing 100871 |
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| 基金项目： | 国家自然科学基金重大项目(6989022)、国家自然科学基金(29973001)联合资助项目(59910161982)及国家杰出青年科学基金(59425006)资助项目 |
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| 摘 要： | 利用STM隧道电流焦耳热诱导分解气化的热化学烧孔方法，对两种存储材料DEA(TCNQ)2和TEA(TCNQ)2的存储性能作了比较,DEA(TCNQ)2可以得到更高的存储密度、更大的信息孔深/孔径比,有更大的写入阈值电压.由此说明通过对存储材料的设计可以对存储系统的性能进行优化.
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| 关 键 词： | STM 信息存储 热化学烧孔 存储材料 |
| 收稿时间： | 2001-04-17 |
| 修稿时间： | 2001年4月17日 |
Comparative about the STM Thermochemical Hole Burning of DEA (TCNQ)2 and TEA (TCNQ)2 |
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| Lei Xiao-Jun Chen Hai-Feng Liu Zhong-Fan.Comparative about the STM Thermochemical Hole Burning of DEA (TCNQ)2 and TEA (TCNQ)2[J].Acta Physico-Chimica Sinica,2001,17(9):769-772. |
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| Authors: | Lei Xiao-Jun Chen Hai-Feng Liu Zhong-Fan |
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| Institution: | Center of Nanoscale Science ＆ Technology,College of Chemistry and Molecular Engineering,Peking University,Beijing 100871 |
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| Abstract: | The thermochemical hole burning properties of two different charge transfer complexes,DEA(TCNQ)_2 and TEA(TCNQ)_2,were studied in this work.It shows that the data writing on DEA(TCNQ)_2 needs a larger threshold voltage compared with TEA(TCNQ)_2,and that the DEA(TCNQ)_2 gives a smaller hole size and a higher depth/diameter ratio,demonstrating the possibility of optimizing the storage performance with a suitable molecular design. |
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| Keywords: | STM Data storage Thermochemical Hole Burning Storage material |
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