Calculation of threshold voltage for phase-change memory device |
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Authors: | E Voronkov |
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Institution: | Moscow Power Engineering Institute, Department of Semiconductor Electronics, Krasnokazarmenaja 14, 111250 Moscow, Russian Federation |
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Abstract: | Calculations of threshold voltage, which starts up transformation of active region in memory device from amorphous to crystalline state in phase-change random access memory, are reported. The calculations are based on the assumption that the emission of holes from the traps stimulates switching by forming conductive channel between electrodes. The results obtained by calculation correlate with the experimental data and the data reported in literature. |
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Keywords: | 73 61 Jc 77 22 Jp 72 80 Ng 73 50 Fq |
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