Abnormal frequency dispersion of the admittance associated with a chromium/plasma deposited a-SiNx:H/p-Si structure |
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Authors: | Orhan Özdemir ?smail Atilgan |
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Institution: | a Yildiz Technical University, Department of Physics, Esenler, ?stanbul, Turkey b Middle East Technical University, Department of Physics, Balgat, Ankara, Turkey |
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Abstract: | Admittance (Ym) versus applied gate bias (VG) on MIS structure (Cr/a-SiNx:H/p-Si) was measured as a function of frequency (mHz-MHz)/temperature (77-400 K) as parameters to investigate minority carrier behavior. Strong frequency dispersion in measured capacitance at inverting gate bias (positive biases for p-type silicon substrate) and low frequency behavior in capacitance-voltage (C-V) curves under high measuring frequencies (above kHz) at 300-400 K temperature interval are reported. This phenomenon is interpreted via lateral hopping conductivity of self-inversion charges beyond the gate inside a-SiNx:H film near interface as generation mechanism of minorities with a lower activation energy (0.11 eV) rather than prevailing mechanisms of much higher activation energies (namely, generation-recombination and diffusion). |
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Keywords: | 81 05 Gc 81 15 Gh 81 40 Tv 84 37 +q 85 30 &minus z 85 30 Mn 85 40 &minus e 85 50 &minus n |
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