Study on the device characteristics of FePc and FePcCl organic thin film Schottky diodes: Influence of oxygen and post deposition annealing

Device characteristics of Al/FePc/Au and Al/FePcCl/Au are performed and found to show rectification properties. The basic diode parameters of the device are determined. The electrical conductivity has been measured both after exposure to oxygen for 20 days and after annealing at temperature up to 473 K. Current density-voltage characteristics under forward bias are found to be due to ohmic conduction at lower voltage regions. At higher voltage regions there is space charge limited conductivity (SCLC) controlled by a discrete trapping level above the valance edge. The electrical parameters of oxygen doped and annealed samples in the ohmic and SCLC region are determined. The reverse bias curves are interpreted in terms of a transition from electrode-limited Schottky emission to the bulk-limited the Poole-Frenkel effect. The Schottky barrier parameters of oxygen doped and annealed structures of FePc and FePcCl are determined from the C²-V characteristics.