Physico-chemical processes in metal-oxide-semiconductor transistors with thick gate oxide during high electric field stress

A complete study of the defects created in the gate oxide and at the gate oxide/substrate interface of metal-oxide-semiconductor transistors with thick gate oxide (t_ox > 10 nm) during high electric field stress, and the mechanisms responsible for these defects creation have been given. In addition, some results of positive/negative high electric field stress with constant gate voltage of commercial n-channel power metal-oxide-semiconductor transistors with thick gate oxide of 100 nm, have been explained using this study.