No-catalyst growth of vertically-aligned AlN nanocone field electron emitter arrays with high emission performance at low temperature |
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Authors: | Liu Fei Mo Fu-Yao Li Li Su Zan-Ji Huang Ze-Qiang Deng Shao-Zhi Chen Jun Xu Ning-Sheng |
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Affiliation: | Key Laboratory of Display Material and Technology of Guangdong Province, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China |
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Abstract: | The AlN nanostructures with a wide band-gap of 6.28 eV are considered as ideal cold cathode materials because of their low electron-affinity. Many methods have been devoted to fabricating AlN nanostructures, but high growth temperature over 800 ℃ and the use of the catalysts in most methods limit their practical application and result in their poor field-emission behaviours in uniformity. This paper reports that without any catalysts, a simple chemical vapour deposition method is used to synthesize aligned AlN nanocone arrays at 550 ℃ on silicon substrate or indium tin oxide glass. Field emission measurements show that these nanocones prepared at low temperature have an average turn-on field of 6 V/μm and a threshold field of 11.7 V/μm as well as stable emission behaviours at high field, which suggests that they have promising applications in field emission area. |
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Keywords: | AlN nanocone low-temperature growth no-catalyst field-emission |
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