Vibrational spectroscopy characterization of magnetron sputtered silicon oxide and silicon oxynitride films |
| |
Authors: | V. Godinho, V.N. Denisov, B.N. Mavrin, N.N. Novikova, E.A. Vinogradov, V.A. Yakovlev, C. Fern ndez-Ramos, M.C. Jim nez de Haro,A. Fern ndez |
| |
Affiliation: | aInstituto de Ciencia de Materiales de Sevilla-CSIC/US, Avda. Américo Vespucio n° 49, 41092 Seville, Spain;bUniversité Libre de Bruxelles, Avenue F.D. Roosevelt 50, B 1050 Bruxelles, Belgium;cInstitute for Spectroscopy - Russian Academy of Sciences, 142190, Troitsk, Moscow reg., Russia;dInstitute for Prospective and Technological Studies-JRC European Commission, C/Inca Garcilaso s/n, 41092 Seville, Spain |
| |
Abstract: | Vibrational (infrared and Raman) spectroscopy has been used to characterize SiOxNy and SiOx films prepared by magnetron sputtering on steel and silicon substrates. Interference bands in the infrared reflectivity measurements provided the film thickness and the dielectric function of the films. Vibrational modes bands were obtained both from infrared and Raman spectra providing useful information on the bonding structure and the microstructure (formation of nano-voids in some coatings) for these amorphous (or nanocrystalline) coatings. X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) analysis have also been carried out to determine the composition and texture of the films, and to correlate these data with the vibrational spectroscopy studies. The angular dependence of the reflectivity spectra provides the dispersion of vibrational and interference polaritons modes, what allows to separate these two types of bands especially in the frequency regions where overlaps/resonances occurred. Finally the attenuated total reflection Fourier transform infrared measurements have been also carried out demonstrating the feasibility and high sensitivity of the technique. Comparison of the spectra of the SiOxNy films prepared in various conditions demonstrates how films can be prepared from pure silicon oxide to silicon oxynitride with reduced oxygen content. |
| |
Keywords: | Silicon oxide Silicon oxynitride Magnetron sputtering Vibrational spectroscopy Infrared Raman |
本文献已被 ScienceDirect 等数据库收录! |
|