CuInS2量子点敏化ZnO基光阳极的制备与性能研究

采用两步法在导电玻璃(FTO)基板上制备纯氧化锌(ZnO)纳米棒和钇掺杂的氧化锌(ZnO∶Y)纳米棒,采用连续离子层吸附反应法(SILAR)在所制备的ZnO及ZnO∶Y纳米棒上沉积CuInS₂量子点制备ZnO/CuInS₂和ZnO∶Y/CuInS₂光阳极。利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、电子探针能谱仪(EDS)、紫外-可见分光光度计(UV-Vis)、电流密度-电压(J-V)曲线等技术手段对不同光阳极样品的晶相结构、微观形貌、化学组成、光吸收性能和太阳电池性能进行了表征。实验结果表明:所制备的ZnO纳米棒和ZnO∶Y纳米棒为六方纤锌矿结构。CuInS₂量子点敏化的ZnO纳米棒薄膜的光学带隙从3.22 eV减小为2.98 eV。CuInS₂量子点敏化ZnO∶Y太阳能电池的短路电流密度和光电转换效率比未掺杂的ZnO纳米棒组装的太阳能电池分别提高了6.5%和50.4%。

Preparation and Properties of CuInS2 Quantum Dot-Sensitized ZnO Based Photoanode

Pure ZnO nanorods and Y-doped ZnO nanorods (ZnO∶Y) were prepared on conductive glass (FTO) substrate by two-step method. ZnO/CuInS₂ and ZnO∶Y/CuInS₂ photoanodes were fabricated by successive ionic layer adsorption and reaction (SILAR), respectively. The crystal phase structure, micro-morphology, chemical composition, light absorption performance and solar cell efficiency of different photoanode samples were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive spectrometer(EDS), ultraviolet visible spectrophotometer (UV-Vis) and current density-voltage (J-V) curves and other technical means. The experimental results show that the prepared ZnO nanorods and ZnO∶Y nanorods have a hexagonal wurtzite structure. The optical band gap of the CuInS₂ quantum dot-sensitized ZnO nanorod films reduce from 3.22 eV to 2.98 eV. Compared with ZnO/CuInS₂ photoanode solar cell, the short-circuit current density and photoelectric conversion efficiency of ZnO∶Y/CuInS₂ photoanodes solar cell increase by 6.5% and 50.4%, respectively.