| Abstract: | The electrical activity of defects induced by high-energy proton irradiation inInSb andInAs semiconductors is investigated by etching from their surfaces a layer whose thickness is equal to the depth of defect localization and preparing a MOS structure. Two layers of defects of different origin and electrical are detected, and their influence on the surface-state energy spectrum, the recombination activity, and the kinetic characteristics of the defective layer is revealed. The threshold increase in the photosensitivity and the speed of performance and vanishing of the burst noise in MOS structures are found. The results obtained are explained for a model of conservation of the local electrical neutrality that specifies the position of the Fermi energy levels in irradiated semiconductors. Tomsk State University of Control Systems and Radioelectronics. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 37–45, September, 1999. |
