Institution: | a Laboratorie de Physique de la Matière, UA-CNRS 358, Bâtiment 502, INSA, Lyon, 20 Avenue Albert Einstein, F-69621, Villeurbanne Cedex, France b Laboratoire de Thermochimie Minérale, UA-CNRS 116, Bâtiment 401, INSA, Lyon, 20 Avenue Albert Einstein, F-69621, Villeurbanne Cedex, France c Laboratoire Surfaces et Interfaces, UA-CNRS 794, Case 901, Faculté des Sciences de Luminy, F-13288, Marseille Cedex, France |
Abstract: | Thin thermal SiO2 films on crystalline silicon substrate were nitrided at low ammonia pressures (10-6 PNH3 10-1 mbar) for times varying from 1 to 10 h, by means of two techniques. (i) Surface nitridation has been achieved by thermal activation at high temperature (HT), in the range 800–1100°C. (ii) A new process at low temperature (LT), was employed at T ≈ 30°C, under electron-beam irradiation; the nitridation-reaction rate depends on the electron energy (reaching a maximum within the energy range 1 to 2 keV), and on the electron flux. Conduction and electron trapping on the nitrided oxide films depends on the chemical compositions and on the amount of nitrogen incorporated into the bulk of the films and/or at the SiO2-Si interface. |