Mass transfer in non-steady-state hydride epitaxy of Si1?x Gex/Si structures

Numerical simulation of the non-steady-state kinetics for the solid solutions MBE-grown from silane and germane with vapor sources was carried out. The smearing of the germanium distribution at the interfaces in the Si_1?x Ge_x/Si structures was studied both in the absence of the atomic fluxes in the reactor and in their presence (the “hot-wire” method). It is shown that the use of an additional hot source enhances the growth. Moreover, at gas pressures exceeding 10^?3 torr (provided that the gas flow remains molecular) and at growth temperatures T _gr<600°C, such conditions can minimize the width of the transition regions at the interfaces.