Elastic and inelastic scattering in silicon using Mössbauer diffraction |
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| Authors: | M L Crow G Schupp W B Yelon J G Mullen A Djedid |
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| Institution: | (1) Research Reactor and Department of Physics, University of Missouri, 65211 Columbia, MO, USA;(2) Department of Physics, Purdue University, 47907 West Lafayette, IN, USA |
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| Abstract: | The Mossbauer diffraction instrument at the Missouri University Research Reactor has been used to measure the elastic and inelastic contributions to the 444 Bragg reflection in dynamic silicon at room temperature. These measurements used the 46.5-keV gamma rays from high intensity183Ta sources cooled to liquid nitrogen temperature. The main feature of this study compared to similar measurements on silicon is the significantly improved momentum space resolution. ΔQ values of 0.011 Å?1 and 0.11 Å?1 were measured for the transverse and longitudinal directions, respectively. |
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