Band gap and band offsets of GaNAsBi lattice matched to GaAs substrate |
| |
Authors: | Said Nacer Abdelkader Aissat Kais Ferdjani |
| |
Affiliation: | (1) Department of Electronics, University of Blida, B.P. 270, Blida, Algeria |
| |
Abstract: | In this paper, we calculate the band gap and the band discontinuities of a GaN y AsBi x structure lattice matched to GaAs substrate using the conduction and the valence band anticrossing models at the same time. The results obtained show a good agreement with experiment. The nitrogen and the bismuth concentrations leading to a wavelength emission of 1.55 μm have been determined (x = 3.5%, y = 2%). This structure shows a good electron confinement resulting in a high characteristic temperature. |
| |
Keywords: | GaNAsBi Band anticrossing Band offset Band gap Lattice matched |
本文献已被 SpringerLink 等数据库收录! |