Band gap and band offsets of GaNAsBi lattice matched to GaAs substrate |
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Authors: | Said Nacer Abdelkader Aissat Kais Ferdjani |
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Institution: | (1) Department of Electronics, University of Blida, B.P. 270, Blida, Algeria |
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Abstract: | In this paper, we calculate the band gap and the band discontinuities of a GaN
y
AsBi
x
structure lattice matched to GaAs substrate using the conduction and the valence band anticrossing models at the same time.
The results obtained show a good agreement with experiment. The nitrogen and the bismuth concentrations leading to a wavelength
emission of 1.55 μm have been determined (x = 3.5%, y = 2%). This structure shows a good electron confinement resulting in a high characteristic temperature. |
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Keywords: | GaNAsBi Band anticrossing Band offset Band gap Lattice matched |
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