Band gap and band offsets of GaNAsBi lattice matched to GaAs substrate

In this paper, we calculate the band gap and the band discontinuities of a GaN _y AsBi _x structure lattice matched to GaAs substrate using the conduction and the valence band anticrossing models at the same time. The results obtained show a good agreement with experiment. The nitrogen and the bismuth concentrations leading to a wavelength emission of 1.55 μm have been determined (x = 3.5%, y = 2%). This structure shows a good electron confinement resulting in a high characteristic temperature.