| 摘 要： | A novel InGaAs/InAlAs coupled quantum well structure is proposed for large field-induced refractive index change with low absorption loss. In the case of low applied electric field of 15 kV/cm and low absorption loss (±≤ 100 cm-1), a large field-induced refractive index change (for transverse electric (TE) mode, △n = 0.012; for transverse magnetic (TM) mode, △n = 0.0126) is obtained in the structure at the operation wavelength of 1.55 μm. The value is larger by over one order of magnitude than that in a rectangular quantum well. The result is very attractive for semiconductor optical switching devices.
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