| 硅衬底GaN基LED N极性n型欧姆接触研究 |
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| 引用本文： | 封飞飞,刘军林,邱冲,王光绪,江凤益.硅衬底GaN基LED N极性n型欧姆接触研究[J].物理学报,2010,59(8):5706-5709. |
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| 作者姓名： | 封飞飞 刘军林 邱冲 王光绪 江凤益 |
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| 作者单位： | (1)晶能光电(江西)有限公司,南昌 330029; (2)南昌大学教育部发光材料与器件工程研究中心,南昌 330047; (3)南昌大学教育部发光材料与器件工程研究中心,南昌 330047; 晶能光电(江西)有限公司,南昌 330029; (4)南昌大学教育部发光材料与器件工程研究中心,南昌 330047;晶能光电(江西)有限公司,南昌 330029 |
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| 基金项目： | 国家高技术研究发展计划(批准号:2006AA03A128),教育部长江学者与创新团队发展计划(批准号:IRT0730)资助的课题. |
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| 摘 要： | 在Si衬底GaN基垂直结构LED的N极性n型面上,利用电子束蒸发的方法制作了Ti/Al电极,通过了I-V曲线研究了有无AlN缓冲层对这种芯片欧姆接触的影响.结果显示,去除AlN缓冲层后的N极性n型面与Ti/Al电极在500到600 ℃范围内退火才能形成欧姆接触.而保留AlN缓冲层的N极性n型面与Ti/Al电极未退火时就表现为较好的欧姆接触,比接触电阻率为2×10-5 Ω·cm2,即使退火温度升高至600 ℃,也始终保持着欧姆接触特性.因此,AlN缓冲层的存在是Si衬底GaN基垂直结构LED获得高热稳定性n型欧姆接触的关键.
关键词：
硅衬底
N极性
AlN缓冲层
欧姆接触
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| 关 键 词： | 硅衬底 N极性 AlN缓冲层 欧姆接触 |
| 收稿时间： | 2009-12-04 |
N-polar n-type Ohmic Contact of GaN-based LED on Si substrate |
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| Feng Fei-Fei,Liu Jun-Lin,Qiu Chong,Wang Guang-Xu,Jiang Feng-Yi.N-polar n-type Ohmic Contact of GaN-based LED on Si substrate[J].Acta Physica Sinica,2010,59(8):5706-5709. |
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| Authors: | Feng Fei-Fei Liu Jun-Lin Qiu Chong Wang Guang-Xu Jiang Feng-Yi |
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| Institution: | Education Ministry Engineering Research Center for Luminescence Materials and Devices, Nanchang University, Nanchang 330047, China;Education Ministry Engineering Research Center for Luminescence Materials and Devices, Nanchang University, Nanchang 330047, China; Latticepower (jiangxi) Corporation, Nanchang 330096, China;Latticepower (jiangxi) Corporation, Nanchang 330096, China;Education Ministry Engineering Research Center for Luminescence Materials and Devices, Nanchang University, Nanchang 330047, China;Education Ministry Engineering Research Center for Luminescence Materials and Devices, Nanchang University, Nanchang 330047, China; Latticepower (jiangxi) Corporation, Nanchang 330096, China |
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| Abstract: | Ti/Al contacts have been deposited by electron beam Evaporation onto N-polar n-type surfaces of GaN-based vertical structure LED on Si substrate. The effect of AlN buffer layer on ohmic contact of these chips has been investigated through I-V characteristic. The results shown Ti/Al contacts prepared on N-polar n-type surface without AlN buffer layer became ohmic contact after annealing in the temperature range of 500—600℃. The as-deposited Ti/Al contacts on N-polar n-type surface with AlN buffer layer shown ohmic behaviors with a specific contact resistivity of 2×10-5 Ωcm2 and maintained ohmic contact characteristics until anneal at 600℃. Therefore, The exsiting of AlN buffer layer is the key to forming highthermal stability ohmic contact for GaN-based vertical structure LED on Si substrate. |
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| Keywords: | Si substrate N-polar AlN buffer layer ohmic contact |
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