| 硅体中磷反应扩散系统解的整体存在性及渐近性 |
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| 引用本文： | 杨万利,陈金海.硅体中磷反应扩散系统解的整体存在性及渐近性[J].应用数学,1996,9(3):382-387. |
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| 作者姓名： | 杨万利 陈金海 |
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| 作者单位： | 北京解放军装甲兵工程学院，河北师范大学数学系 |
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| 摘 要： | 本文用上下解方法，研究了一类带混合非齐次边界条件的化学反应──硅体中磷反应扩散系统，采用避开△的特征函数构造上下解的方法，得到一类充分条件，以使其整体解渐近趋向于Ｓｔｅａｄｙ－ｓｔａｔｅ解．
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| 关 键 词： | 反应扩散系统 整体解 上下解 渐近性 |
The Asymptotic Behavior and Existence of The Global Solution for the Systems of Phosphorus Diffusion in Silicon |
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| Yang Wanli, Chen Jinhai.The Asymptotic Behavior and Existence of The Global Solution for the Systems of Phosphorus Diffusion in Silicon[J].Mathematica Applicata,1996,9(3):382-387. |
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| Authors: | Yang Wanli Chen Jinhai |
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| Abstract: | In this paper,a kind of chemical reaction on the phosphorus diffusion in silicon with the mixed nonhomogeneous boundary condition is studied,by constructing a couple appropriate upper and lower solution independent of the eigenfunction of the operator,a sufficient condition which sure the global solution asymptotic convergence to steady-state solution are obtained. |
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| Keywords: | Reaction-Diffusion Systems Global Solution Upper and Lower Solution Asymptotic Behavior |
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