Soft X-ray fluorescence and photoluminescence of Si nanocrystals embedded in SiO2 |
| |
| Authors: | GS Chang JH Son KH Chae CN Whang EZ Kurmaev SN Shamin VR Galakhov A Moewes DL Ederer |
| |
| Institution: | (1) Atomic-scale Surface Science Research Center and Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea (Fax: +82-2/312-7090, E-mail: gschang@phya.yonsei.ac.kr), KR;(2) Institute of Metal Physics, Russian Academy of Science-Ural Division, 620219 Yekaterinburg GSP-170, Russia, RU;(3) Department of Physics and Engineering Physics, University of Saskatchewan, Saskatchewan S7N 5E2, Canada, CA;(4) Department of Physics, Tulane University, New Orleans, Louisiana 70118, USA, US |
| |
| Abstract: | We have used ion-beam mixing to form Si nano-crystals in SiO2 and SiO2/Si multilayers, and applied photoluminescence and soft-X-ray emission spectroscopy to study the nanoparticles. Ion-beam mixing
followed by heat treatment at 1100 °C for 2 h forms the Si nanocrystals. The ion-beam-mixed sample shows higher PL intensity
than that of a Si-implanted SiO2 film. Photon and electron-excited Si L2,3 X-ray emission measurements were carried out to confirm the formation of Si nanocrystal in SiO2 matrix after ion-beam mixing and heat treatment. It is found that Si L2,3 X-ray emission spectra of ion-beam-mixed Si monolayers in heat-treated SiO2 films lead to noticeable changes in the spectroscopic fine structure.
Received: 20 November 1999 / Accepted: 17 April 2000 / Published online: 5 October 2000 |
| |
| Keywords: | PACS: 78 55 -m 71 24 +q 78 70 En |
| 本文献已被 SpringerLink 等数据库收录！ |
|
