A simple model for calculating the height of Schottky barriers at contacts of transition metals with silicon carbide polytypes

The heights of Schottky barriers at contacts of Ag, Au, Pd, Pt, Ti, Ru, Ni, Cr, Al, Mg, and Mn metals with different polytypes of silicon carbide SiC are self-consistently calculated in the framework of a simple model proposed earlier. The results of calculations performed for contacts of transition metals with silicon carbide polytypes are in quite reasonable agreement with experimental data under the assumption that silicon vacancies with an energy E_d=E_V+2.1 eV make a dominant contribution to the Schottky barrier height.