Dynamical behavior of electron transport in AlGaAs/GaAs
double-barrier structures under a high-frequency radiation field |
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Authors: | Z H Dai J Ni Y M Sun W T Wang |
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Institution: | (1) Department of Physics, Yantai University, 264005, Yantai, P.R. China;(2) Department of Physics and Key Laboratory of Atomic and Molecular Nanoscience, Tsinghua University, 100084, Beijing, P.R. China |
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Abstract: | We investigate the time-dependent dynamical behavior of electron transport
in AlGaAs/GaAs double-barrier structures under a high-frequency radiation
field. The effects of the radiation field with different amplitude and
frequency on the real-time and mean current-voltage curves are taken into
account. We find that the amplitude and frequency of the radiation field
affect the final stable state current-voltage (I-V) behaviors, which leads
to the switching between different current states at a smaller bias than
that of the absence of the radiation field, and both current hysteresis and
resonant peaks are suppressed by the external radiation field. The high
radiation field strength can make the resonant peak of current split and the
hysteresis of current disappear. This effect provides the potential to use
double-barrier structure as a THz photoelectric switch. |
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Keywords: | 73 63 Hs Quantum wells 73 40 Gk Tunneling 73 23 -b Electronic transport in mesoscopic systems 72 10 Bg General formulation of transport theory |
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