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Au doped Sb3Te phase-change material for C-RAM device |
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| Authors: | Feng Wang Ting Zhang Zhi-tang Song Bo Liu Bomy Chen |
| Institution: | a Key Laboratory of Physical Electronics and Devices of Ministry of Education, Xi’an Jiaotong University, Xi’an, 710049 ShaanXi, China b Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050 Shanghai, China c Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086, USA |
| Abstract: | Au doped Sb3Te phase-change films have been investigated by means of in situ temperature-dependent resistance measurement. Crystallization temperature of 2 at.% Au doped Sb3Te has been enhanced to 161 °C, which leads to a better data retention. The physical stability of the film has been improved evidently after adding Au as well. Resistance contrast has been improved to 1.1 × 104, one order of magnitude higher than that of pure Sb3Te. X-ray diffraction patterns indicate the polycrystalline Au-SbTe series have hexagonal structure, similar with pure Sb3Te alloy, when Au doping dose is less than 9 at.%. |
| Keywords: | 64 70 Kb 61 43 Dq 73 61 Jc |
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