Real time investigation of the growth of silicon carbide nanocrystals on Si(1 0 0) using synchrotron X-ray diffraction |
| |
Authors: | S. Milita D. Jones V. Palermo |
| |
Affiliation: | a CNR-IMM, Via Gobetti 101, I-40129 Bologna, Italy b Institut Néel, CNRS, 25 av. des Martyrs, 38042 Grenoble, France c CNR-ISOF, Via Gobetti 101, I-40129 Bologna, Italy |
| |
Abstract: | The growth of silicon carbide nanocrystals on Si(1 0 0) is studied by synchrotron surface X-ray diffraction (SXRD) during annealing at high temperature. A chemisorbed methanol monolayer is used as carbon source, allowing to have a fixed amount of carbon atoms to feed the growth. At room temperature, minor changes in the 2 × 1 reconstruction of silicon are observed due to the formation of Si-O-CH3 and Si-H bonds from methanol molecules. When annealed at 500 °C, carbon incorporation into the silicon leads only to local modifications of the surface structure. Above 600 °C, tri-dimensional silicon carbide nanocrystals growth takes place, together with surface roughening and sharp decrease of domain sizes of the 2 × 1 reconstruction. The different processes taking place at each temperature are clearly distinguished and identified during the real time SXRD measurements. |
| |
Keywords: | 61.10.Nz 68.47.Fg |
本文献已被 ScienceDirect 等数据库收录! |
|