Properties of MgxZn1−xO thin films sputtered in different gases |
| |
| Authors: | Da-Yong Jiang Ke-Wei Liu Yan-Min Zhao Bin Yao De-Zhen Shen |
| |
| Affiliation: | a Key Laboratory of Excited State Processes, Changchun Insititute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China
b Jilin University, Changchun 130023, People's Republic of China |
| |
| Abstract: | MgxZn1−xO alloy films were prepared on sapphire substrates using Ar and N2 as the sputtering gases. The effect of the sputtering gas on the structural, optical and electrical properties of the MgxZn1−xO films was studied. By using N2 as the sputtering gas, the MgxZn1−xO film shows p-type conductivity and the band gap is larger than that employing Ar as the sputtering gas. The reason for this phenomenon is thought to be related to the reaction between N-O or N-Zn, and the N-doping. |
| |
| Keywords: | MgxZn1&minus xO Band gap Raman Electrical properties |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
