Formation of longitudinal aggregation of inclusions in bulk sapphire and yttrium‐aluminum garnet grown by horizontal directed crystallization method

It is shown that the formation of longitudinal aggregation of inclusions in bulk sapphire and yttrium‐aluminum garnet (YAG) grown by the method of HDC is caused by local accumulation of impurities, disturbance of morphological stability of the crystallization front and capture of inclusions and impurities in the nodal region of the melt two‐vortex convection. Studied is the influence of thermal and geometrical parameters of the melt and the shape of the crystallization front on the conditions of the formation of the capture of inclusions.