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Effects of low temperature annealing on the electrical properties of plasma grown oxides |
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| Authors: | K.J. Barlow W. Eccleston S. Taylor |
| Affiliation: | Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3BX, UK |
| Abstract: | The effects of low temperature annealing on the electrical properties of plasma grown oxides have been investigated. In conjunction with a trichloroethylene/oxygen plasma it is found that plasma oxides with good electrical properties can be obtained at annealing temperatures below 600°C. |
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