Nanocrystalline Pr-doped ZnO insulator for metal–insulator–Si Schottky diodes |
| |
Authors: | AA Dakhel |
| |
Institution: | aDepartment of Physics, College of Science, University of Bahrain, P.O. Box 32038, Bahrain |
| |
Abstract: | Pr-doped ZnO (ZnO:Pr) insulating thin films were prepared on glass and Si substrates by oxidation in air. The films were characterised by X-ray diffraction (XRD), energy dispersion X-ray fluorescence (EDXRF), and optical absorption spectroscopy. The molar ratio Pr/Zn of the samples was determined by the EDXRF method. The XRD study shows the formation of nanocrystalline (26–50 nm) nc-Pr-doped ZnO. The optical and electrical conduction were explained by a slight change of stoichiometric composition. The nc-ZnO:Pr/Si heterojunctions are being Schottky barrier diodes (SBDs) and exhibited high rectification behaviour. The parameters describe the current pass through those SBDs were determined according to the available models. |
| |
Keywords: | A1 Pr-doped ZnO A1 Nanograin-doped ZnO B1 Oxidation of Zn B2 Insulator ZnO B3 Metal-oxide-Si device |
本文献已被 ScienceDirect 等数据库收录! |
|