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Sub-nanosecond microchip laser with intracavity Raman conversion
Authors:AA Demidovich  PA Apanasevich  LE Batay  AS Grabtchikov  AN Kuzmin  VA Lisinetskii  VA Orlovich  OV Kuzmin  VL Hait  W Kiefer  MB Danailov
Institution:Institute of Molecular and Atomic Physics, National Academy of Sciences of Belarus, F. Skaryna Ave. 70, 220072 Minsk, Belarus, BY
Stepanov Institute of Physics, National Academy of Sciences of Belarus, F. Skaryna Ave. 68, 220072 Minsk, Belarus, BY
STC FIRN, Starokubanskaya Str. 114, 350058 Krasnodar, Russia, RU
Universit?t Würzburg, Institut für Physikalische Chemie, Am Hubland, 97074 Würzburg, Germany, DE
Laser Lab Sincrotrone-Trieste, SS14, km. 163.5, 34012 Trieste, Italy, IT
Abstract:Efficient sub-nanosecond pulse operation of microchip lasers with intracavity Raman conversion and pulse compression is presented for the first time. The microchip lasers were composed of Nd:LSB or Nd:YAG laser crystals, Cr4+:YAG saturable absorber, and Ba(NO3)2 Raman medium. The pulse duration obtained at the Stokes wavelength (1196 nm) was as short as 118 ps. Optical conversion efficiency of laser-diode pump power to the Stokes power of 8% was reached. Pulse energy and peak power of Stokes emission were 1.2 μJ and 5.4 kW, correspondingly. Numerical calculations are in good agreement with obtained experimental results. Received: 20 December 2002 / Revised version: 6 March 2003 / Published online: 5 May 2003 RID="*" ID="*"Corresponding author. Fax: +1-716/645-6945, E-mail: ankuzmin@acsu.buffalo.edu RID="**" ID="**"Present address: University at Buffalo, SUNY, The Institute for Lasers, Photonics, and Biophotonics, 458 NSC, Buffalo, NY 14 260-3000, USA
Keywords:PACS: 42  55  Rz  42  55  Xi  42  55  Ye
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