Thermally activated magnetization reversal in magnetic tunnel junctions |
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Authors: | Zhou Guang-Hong Wang Yin-Gang Qi Xian-Jin Li Zi-Quan and Chen Jian-Kang |
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Institution: | School of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China; Department of Mechanical Engineering, Huaiyin Institute of Technology, Huaian 223003, China |
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Abstract: | In this paper, the magnetization reversal of the ferromagnetic
layers in the IrMn/CoFe/AlOx/CoFe magnetic tunnel junction has
been investigated using bulk magnetometry. The films exhibit very
complex magnetization processes and reversal mechanism. Thermal
activation phenomena such as the training effect, the asymmetry of
reversal, the loop broadening and the decrease of exchange field
while holding the film at negative saturation have been observed on
the hysteresis loops of the pinned ferromagnetic layer while not on
those of the free ferromagnetic layer. The thermal activation
phenomena observed can be explained by the model of two energy
barrier distributions with different time constants. |
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Keywords: | magnetic tunnel junctions magnetization reversal thermal activation exchange
coupling |
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