Radio-frequency modulation of the reflection of light in semiconductor heterostructures |
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| Authors: | O A Ryabushkin V A Sablikov |
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| Institution: | (1) Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 141120 Fryazino, Moscow Region, Russia |
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| Abstract: | A contact-free method of modulation spectroscopy of semiconductor heterostructures is developed. The method employs the effect
of an intensity-modulated rf or microwave field on the reflection of the probe light and makes it possible to investigate
electron-hole interaction effects in different layers of a heterostructure. A model is proposed which explains the characteristic
features of the rf-modulated optical reflection spectra observed on selectively doped GaAs/AlGaAs heterostructures is proposed.
Pis’ma Zh. éksp. Teor. Fiz. 67, No. 3, 217–221 (10 February 1998) |
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