Investigation of the Interaction between C60 and Si Atoms |
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| Authors: | Hideki Tanaka Jun Onoe Toshiki Kara Aiko Nakao Kazuo Takeuchi |
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| Affiliation: | The Institute of Physical and Chemical Research (RIKEN) , 2-1 Hirosawa, Wako, Saitama , 351-0198 , Japan |
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| Abstract: | Abstract The interaction between C60 and Si atoms was investigated using X-ray photoelectron spec-troscopy (XPS) for the photo-irradiated Si-deposited C60 film in order to establish a method of a synthesis for the Si-coated C60. It was found that the Cls spectrum of the photo-irradiated film contains a peak due to C-Si bonding, while no peak due to C-Si bonding was observed for the film before photo-irradiation. This indicates that Si atoms stick to C60 when using the present method. |
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| Keywords: | Si-coated C60 XPS photo-induced reaction |
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