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Thermodynamic modeling of the behavior of silicon oxide and nitride precursors in the preparation of dielectric layers |
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| Authors: | V A Titov V I Rakhlin A A Titov F A Kuznetsov M G Voronkov |
| Institution: | (1) Nikolaev Institute of Inorganic Chemistry, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 3, Novosibirsk, 630090, Russia;(2) Irkutsk Institute of Chemistry, Siberian Division, Russian Academy of Sciences, Irkutsk, Russia |
| Abstract: | The thermodynamic properties of several silicon-containing derivatives of asymmetric dimethylhydrazine were estimated by comparative methods. The CVD diagrams of the deposition of silicon nitride and dioxide from gas media containing these reagents were constructed. |
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