Influence of the sputtering pressure on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering |
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Authors: | Liu Hanfa Zhang Huafu Lei Chengxin Yuan Changkun |
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Abstract: | Transparent conducting zirconium-doped zinc oxide films with high transparency and relatively low re-sistivity have been successfully prepared on water-cooled glass substrate by radio frequency magnetron sputtering at room temperature. The Ar sputtering pressure was varied from 0.5 to 3 Pa. The crystallinity increases and the electri-cal resistivity decreases when the sputtering pressure increases from 0.5 to 2.5 Pa. The cystallinity decreases and the electrical resistivity increases when the sputtering pressure increases from 2.5 to 3 Pa. When the sputtering pressure The deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrate. |
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Keywords: | zirconium-doped zinc oxide films transparent conducting films magnetron sputtering sputtering pressure |
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