Negative differential resistance in thin-film electroluminescent emitters based on zinc sulfide |
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Authors: | N T Gurin A V Shlyapin O Yu Sabitov |
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Institution: | (1) Ulyanovsk State University, Ulyanovsk, 432700, Russia |
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Abstract: | S-and N-type negative differential resistance (NDR) has been observed in thin-film electroluminescent emitters based on zinc sulfide doped with manganese, and conditions for its emergence have been identified. It has been found that when a negative half-wave of voltage is applied to the nontransparent top electrode, an S-type NDR with a region of decreasing current is observed, and when it is applied to the transparent bottom electrode, the NDR will be N-type. The emergence of NDR is due to space charges which form in the near-cathode and near-anode layers of the phosphor. |
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