Chemical effects during formation of the electronic surface structure of III–V semiconductors in a sulfide solution

The electronic properties of the (100) surface of n-GaAs, p-GaAs, and n-InP semiconductors treated with various sulfide solutions have been studied. Sulfide treatment was shown to increase the photoluminescence intensity, decrease the depth of the near-surface depleted region in the semiconductor, and shift the surface Fermi level toward the conduction band. These effects are the stronger, the higher the sulfur chemical activity in the solution. Fiz. Tverd. Tela (St. Petersburg) 41, 875–878 (May 1999)