|
|||||
|
|
Efficiency enhancement of an InGaN light-emitting diode with a p-AIGaN/GaN superlattice last quantum barrier |
|
| Authors: | Xiong Jian-Yong Zhao Fang Fan Guang-Han Xu Yi-Qin Liu Xiao-Ping Song Jing-Jing Ding Bin-Bin Zhang Tao Zheng Shu-Wen |
| Institution: | [1]Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China [2]Guangdong General Research Institute -for Industrial Technology, Guangzhou 510650, China |
| Abstract: | light-emitting diodes, p-AlGaN/GaN superlattice, last quantum barrier, efficiency droop |
| Keywords: | light-emitting diodes p-AlGaN/GaN superlattice last quantum barrier efficiency droop |
| 本文献已被 维普 等数据库收录！ | |